SIR158DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

5.4W

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Package / Case :

PowerPAK® SO-8

Turn On Delay Time :

28 ns

Vgs (Max) :

±20V

Fall Time (Typ) :

16 ns

Number of Pins :

8

Number of Channels :

1

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PDSO-C5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Weight :

506.605978mg

Power Dissipation-Max :

5.4W Ta 83W Tc

Drain Current-Max (Abs) (ID) :

60A

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

40A

ECCN Code :

EAR99

Turn-Off Delay Time :

47 ns

JESD-609 Code :

e3

Number of Terminations :

5

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Width :

5.89mm

Factory Lead Time :

14 Weeks

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Resistance :

1.8MOhm

Pin Count :

8

Published :

2016

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 20A, 10V

Packaging :

Tape and Reel (TR)

Height :

1.04mm

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Rise Time :

36ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Terminal Form :

C BEND

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

4980pF @ 15V

Number of Elements :

1

Length :

4.9mm