SIR106DP-T1-RE3

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Mfr.Part #
SIR106DP-T1-RE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 100V 16.1A PPAK
Stock
6,804
In Stock :
6,804

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
8mOhm @ 15A, 10V
FET Type :
N-Channel
Factory Lead Time :
14 Weeks
Power Dissipation-Max :
3.2W Ta 83.3W Tc
Input Capacitance (Ciss) (Max) @ Vds :
3610pF @ 50V
Drain to Source Resistance :
6.6mOhm
Packaging :
Tape and Reel (TR)
Package / Case :
PowerPAK® SO-8
Vgs (Max) :
±20V
Series :
TrenchFET® Gen IV
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
7.5V 10V
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
3.4V @ 250μA
Drain to Source Voltage (Vdss) :
100V
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs :
64nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
16.1A Ta 65.8A Tc
RoHS Status :
ROHS3 Compliant
Datasheets
SIR106DP-T1-RE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIR106DP-T1-RE3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PowerPAK® SO-8, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, SIR106DP-T1-RE3 pinout, SIR106DP-T1-RE3 datasheet PDF, SIR106DP-T1-RE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIR106DP-T1-RE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIR106DP-T1-RE3


N-Channel Tape & Reel (TR) 8mOhm @ 15A, 10V ±20V 3610pF @ 50V 64nC @ 10V 100V PowerPAK® SO-8

SIR106DP-T1-RE3 Overview


The maximum input capacitance of this device is 3610pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 6.6mOhm.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (7.5V 10V), this device helps reduce its power consumption.

SIR106DP-T1-RE3 Features


single MOSFETs transistor is 6.6mOhm
a 100V drain to source voltage (Vdss)


SIR106DP-T1-RE3 Applications


There are a lot of Vishay Siliconix
SIR106DP-T1-RE3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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