SIJA72ADP-T1-GE3

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Mfr.Part #
SIJA72ADP-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 40V 27.9A/96A PPAK
Stock
35,122
In Stock :
35,122

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
2.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C :
27.9A Ta 96A Tc
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Series :
TrenchFET® Gen IV
Power Dissipation-Max :
4.8W Ta 56.8W Tc
Vgs (Max) :
+20V, -16V
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
40V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Rds On (Max) @ Id, Vgs :
3.42mOhm @ 10A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
14 Weeks
Mounting Type :
Surface Mount
Package / Case :
PowerPAK® SO-8
Supplier Device Package :
PowerPAK® SO-8
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
2530pF @ 20V
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Datasheets
SIJA72ADP-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIJA72ADP-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:PowerPAK® SO-8, SIJA72ADP-T1-GE3 pinout, SIJA72ADP-T1-GE3 datasheet PDF, SIJA72ADP-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIJA72ADP-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIJA72ADP-T1-GE3


N-Channel Tape & Reel (TR) 3.42mOhm @ 10A, 10V +20V, -16V 2530pF @ 20V 50nC @ 10V 40V PowerPAK® SO-8

SIJA72ADP-T1-GE3 Description


The SIJA72ADP-T1-GE3 is an N-Channel 40 V (D-S) MOSFET. N channel MOSFETs are a subtype of MOSFET in which the MOSFET channel mostly consists of charge carriers acting as current carriers, such as electrons. The majority of charge carriers will travel throughout the channel once this MOSFET is turned ON.



SIJA72ADP-T1-GE3 Features


  • 100 % Rg and UIS tested

  • Qgd/Qgs ratio < 1 optimizes switching characteristics

  • TrenchFET® Gen IV power MOSFET

  • Tuned for the lowest RDS-Qoss FOM



SIJA72ADP-T1-GE3 Applications


  • Synchronous rectification

  • High power density DC/DC

  • DC/AC inverters

  • Battery and load switch


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