SIJA72ADP-T1-GE3
- Mfr.Part #
- SIJA72ADP-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 27.9A/96A PPAK
- Stock
- 35,122
- In Stock :
- 35,122
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2.4V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 27.9A Ta 96A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Series :
- TrenchFET® Gen IV
- Power Dissipation-Max :
- 4.8W Ta 56.8W Tc
- Vgs (Max) :
- +20V, -16V
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 40V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 3.42mOhm @ 10A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 14 Weeks
- Mounting Type :
- Surface Mount
- Package / Case :
- PowerPAK® SO-8
- Supplier Device Package :
- PowerPAK® SO-8
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2530pF @ 20V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- SIJA72ADP-T1-GE3
N-Channel Tape & Reel (TR) 3.42mOhm @ 10A, 10V +20V, -16V 2530pF @ 20V 50nC @ 10V 40V PowerPAK® SO-8
SIJA72ADP-T1-GE3 Description
The SIJA72ADP-T1-GE3 is an N-Channel 40 V (D-S) MOSFET. N channel MOSFETs are a subtype of MOSFET in which the MOSFET channel mostly consists of charge carriers acting as current carriers, such as electrons. The majority of charge carriers will travel throughout the channel once this MOSFET is turned ON.
SIJA72ADP-T1-GE3 Features
-
100 % Rg and UIS tested
-
Qgd/Qgs ratio < 1 optimizes switching characteristics
-
TrenchFET® Gen IV power MOSFET
-
Tuned for the lowest RDS-Qoss FOM
SIJA72ADP-T1-GE3 Applications
-
Synchronous rectification
-
High power density DC/DC
-
DC/AC inverters
-
Battery and load switch
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