SIJ800DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

9.5 mΩ

Factory Lead Time :

21 Weeks

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Drain to Source Resistance :

9.5MOhm

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Vgs (Max) :

±20V

Supplier Device Package :

PowerPAK® SO-8

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

15ns

Package / Case :

PowerPAK® SO-8

Radiation Hardening :

No

Input Capacitance :

2.4nF

Power Dissipation :

35.7W

Series :

TrenchFET®

Continuous Drain Current (ID) :

20A

Drain to Source Breakdown Voltage :

40V

Turn-Off Delay Time :

45 ns

Number of Elements :

1

Drain to Source Voltage (Vdss) :

40V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

9.5mOhm @ 20A, 10V

Turn On Delay Time :

30 ns

REACH SVHC :

Unknown

FET Type :

N-Channel

Power Dissipation-Max :

4.2W Ta 35.7W Tc

Mounting Type :

Surface Mount

Fall Time (Typ) :

15 ns

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Published :

2013