SIHJ7N65E-T1-GE3

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Mfr.Part #
SIHJ7N65E-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 650V 7.9A PPAK SO-8
Stock
17,865
In Stock :
17,865

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±30V
ECCN Code :
EAR99
Number of Pins :
4
Vgs(th) (Max) @ Id :
4V @ 250µA
Rds On (Max) @ Id, Vgs :
598m Ω @ 3.5A, 10V
Mount :
Surface Mount
Drain to Source Voltage (Vdss) :
650V
Input Capacitance (Ciss) (Max) @ Vds :
820pF @ 100V
REACH SVHC :
No SVHC
Gate Charge (Qg) (Max) @ Vgs :
44nC @ 10V
Package / Case :
PowerPAK® SO-8
Factory Lead Time :
18 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
7.9A Tc
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
7.9A
FET Type :
N-Channel
Published :
2016
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
96W Tc
Threshold Voltage :
2V
RoHS Status :
ROHS3 Compliant
Datasheets
SIHJ7N65E-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHJ7N65E-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Package / Case:PowerPAK® SO-8, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, SIHJ7N65E-T1-GE3 pinout, SIHJ7N65E-T1-GE3 datasheet PDF, SIHJ7N65E-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHJ7N65E-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHJ7N65E-T1-GE3


N-Channel Tape & Reel (TR) 598m Ω @ 3.5A, 10V ±30V 820pF @ 100V 44nC @ 10V 650V PowerPAK® SO-8

SIHJ7N65E-T1-GE3 Overview


A device's maximal input capacitance is 820pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7.9A, which represents the maximum continuous current it can conduct.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2V threshold voltage.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

SIHJ7N65E-T1-GE3 Features


a continuous drain current (ID) of 7.9A
a threshold voltage of 2V
a 650V drain to source voltage (Vdss)


SIHJ7N65E-T1-GE3 Applications


There are a lot of Vishay Siliconix
SIHJ7N65E-T1-GE3 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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