SIB800EDK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

12ns

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

FET Type :

N-Channel

Number of Pins :

6

Pin Count :

6

Pbfree Code :

yes

Package / Case :

PowerPAK® SC-75-6L

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

6V

Number of Terminations :

6

Case Connection :

DRAIN

Continuous Drain Current (ID) :

1.5A

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

20V

Rds On (Max) @ Id, Vgs :

225m Ω @ 1.6A, 4.5V

Vgs (Max) :

±6V

Series :

LITTLE FOOT®

Gate Charge (Qg) (Max) @ Vgs :

1.7nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

70 ns

Current - Continuous Drain (Id) @ 25°C :

1.5A Tc

Drain-source On Resistance-Max :

0.225Ohm

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

20 ns

Published :

2016

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

FET Feature :

Schottky Diode (Isolated)

Transistor Element Material :

SILICON

Fall Time (Typ) :

20 ns

ECCN Code :

EAR99

Power Dissipation-Max :

1.1W Ta 3.1W Tc

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Element Configuration :

Single