SIA469DJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

-30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET® Gen III

Turn On Delay Time :

7 ns

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Manufacturer Package Identifier :

C-07431-SINGLE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Height :

850μm

Rds On (Max) @ Id, Vgs :

26.5m Ω @ 5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

Factory Lead Time :

14 Weeks

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

PowerPAK® SC-70-6

Power Dissipation-Max :

15.6W Tc

Power Dissipation :

3.3W

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 15V

Continuous Drain Current (ID) :

-8.8A

Turn-Off Delay Time :

30 ns

Number of Channels :

1

Reach Compliance Code :

Unknown

Mounting Type :

Surface Mount