SIA456DJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Power Dissipation-Max :

3.5W Ta 19W Tc

Lead Free :

Lead Free

Length :

2.05mm

Resistance :

1.38Ohm

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

200V

Pin Count :

6

Height :

800μm

Width :

2.05mm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs (Max) :

±16V

Radiation Hardening :

No

Terminal Position :

Dual

Number of Terminations :

3

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Package / Case :

PowerPAK® SC-70-6

Current - Continuous Drain (Id) @ 25°C :

2.6A Tc

Pbfree Code :

yes

Published :

2008

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

16V

Power Dissipation :

3.5W

Number of Channels :

1

Rise Time :

20ns

Mount :

Surface Mount

Turn On Delay Time :

5 ns

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Number of Pins :

6

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Fall Time (Typ) :

12 ns

Terminal Form :

C BEND

Max Junction Temperature (Tj) :

150°C

Rds On (Max) @ Id, Vgs :

1.38 Ω @ 750mA, 4.5V

JESD-30 Code :

S-XDSO-C3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Series :

TrenchFET®

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 100V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

REACH SVHC :

Unknown

Pulsed Drain Current-Max (IDM) :

2A

Nominal Vgs :

1.4 V

Continuous Drain Current (ID) :

2.6A

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

16 ns

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

1.4V