SIA449DJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Number of Channels :

1

Turn-Off Delay Time :

39 ns

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

-30V

Case Connection :

DRAIN

Mount :

Surface Mount

Turn On Delay Time :

8 ns

Terminal Form :

NO LEAD

Drain-source On Resistance-Max :

0.02Ohm

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Transistor Application :

SWITCHING

Power Dissipation-Max :

3.5W Ta 19W Tc

Height :

750μm

Power Dissipation :

3.5W

Fall Time (Typ) :

16 ns

FET Type :

P-Channel

Continuous Drain Current (ID) :

12A

Vgs (Max) :

±12V

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Length :

2.05mm

Pulsed Drain Current-Max (IDM) :

30A

JESD-30 Code :

S-PDSO-N3

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

RoHS Status :

ROHS3 Compliant

Package / Case :

PowerPAK® SC-70-6

Operating Mode :

ENHANCEMENT MODE

Rise Time :

20ns

Input Capacitance (Ciss) (Max) @ Vds :

2140pF @ 15V

Mounting Type :

Surface Mount

Published :

2015

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

Number of Elements :

1

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

20m Ω @ 6A, 10V

Number of Pins :

6

Width :

2.05mm

Packaging :

Cut Tape (CT)

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

-1.5V