SIA438EDJ-T1-GE3
- Mfr.Part #
- SIA438EDJ-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SC-70-6
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 6A PPAK SC70-6
- Stock
- 8,431
- In Stock :
- 8,431
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2016
- Continuous Drain Current (ID) :
- 6A
- Reach Compliance Code :
- Unknown
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- MATTE TIN
- Power Dissipation :
- 2.4W
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Pin Count :
- 6
- Drain Current-Max (Abs) (ID) :
- 5.7A
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 46m Ω @ 3.9A, 4.5V
- Terminal Form :
- NO LEAD
- Fall Time (Typ) :
- 10 ns
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- S-XDSO-N3
- Turn-Off Delay Time :
- 15 ns
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 46mOhm
- Gate to Source Voltage (Vgs) :
- 12V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Drain to Source Breakdown Voltage :
- 20V
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 10V
- Vgs (Max) :
- ±12V
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 15A
- Transistor Application :
- SWITCHING
- Series :
- TrenchFET®
- Rise Time :
- 12ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 1.4V @ 250μA
- Power Dissipation-Max :
- 2.4W Ta 11.4W Tc
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- PowerPAK® SC-70-6
- Datasheets
- SIA438EDJ-T1-GE3
N-Channel Tape & Reel (TR) 46m Ω @ 3.9A, 4.5V ±12V 350pF @ 10V 12nC @ 10V PowerPAK® SC-70-6
SIA438EDJ-T1-GE3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 350pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.There is no drain current on this device since the maximum continuous current it can conduct is 5.7A.As a result of its turn-off delay time, which is 15 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 15A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).
SIA438EDJ-T1-GE3 Features
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 15A.
SIA438EDJ-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIA438EDJ-T1-GE3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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