SIA4265EDJ-T1-GE3

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Mfr.Part #
SIA4265EDJ-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK? SC-70-6
Datasheet
Download
Description
P-CHANNEL 20-V (D-S) MOSFET POWE
Stock
19,260
In Stock :
19,260

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation (Max) :
2.9W (Ta), 15.6W (Tc)
RoHS :
Details
Number of Channels :
1 Channel
Brand :
Vishay / Siliconix
Channel Type :
P
Gate Charge (Qg) (Max) @ Vgs :
36 nC @ 8 V
Drain to Source Voltage (Vdss) :
20 V
Package Type :
PowerPAK SC-70
Vgs (Max) :
±8V
Package :
Digi-Reel?
Mounting Type :
Surface Mount
Transistor Polarity :
P-Channel
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Configuration :
Single
Rds On (Max) @ Id, Vgs :
32mOhm @ 4A, 4.5V
Maximum Operating Temperature :
+ 150 C
Supplier Device Package :
PowerPAK? SC-70-6
Operating Temperature :
-55°C ~ 150°C (TJ)
Product Status :
Active
FET Type :
P-Channel
Power Dissipation :
15.6W
FET Feature :
-
Rise Time :
6 ns, 21 ns
MSL :
MSL 1 - Unlimited
Current - Continuous Drain (Id) @ 25°C :
7.8A (Ta), 9A (Tc)
Vgs(th) (Max) @ Id :
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds :
1180 pF @ 0 V
Series :
TrenchFET?
Package / Case :
PowerPAK? SC-70-6
Mounting Style :
SMD/SMT
Product Type :
MOSFET
Packaging :
Cut Tape
Subcategory :
MOSFETs
Channel Mode :
Enhancement
Continuous Drain Current Id :
9A
Product Category :
MOSFET
Qualification :
-
Manufacturer :
Vishay
Minimum Operating Temperature :
- 55 C
Datasheets
SIA4265EDJ-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIA4265EDJ-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Surface Mount, Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:PowerPAK? SC-70-6, SIA4265EDJ-T1-GE3 pinout, SIA4265EDJ-T1-GE3 datasheet PDF, SIA4265EDJ-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIA4265EDJ-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIA4265EDJ-T1-GE3


P-Channel Cut Tape 32mOhm @ 4A, 4.5V ±8V 1180 pF @ 0 V 36 nC @ 8 V 20 V PowerPAK? SC-70-6

SIA4265EDJ-T1-GE3 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1180 pF @ 0 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20 V.

SIA4265EDJ-T1-GE3 Features


a 20 V drain to source voltage (Vdss)


SIA4265EDJ-T1-GE3 Applications


There are a lot of Vishay Siliconix
SIA4265EDJ-T1-GE3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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