SI7230DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

14A

Terminal Position :

Dual

Threshold Voltage :

3V

Vgs(th) (Max) @ Id :

3V @ 250µA

Series :

TrenchFET®

Number of Pins :

8

Element Configuration :

Single

Rise Time :

10ns

JESD-609 Code :

e3

Radiation Hardening :

No

JESD-30 Code :

S-XDSO-C5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

9A

Fall Time (Typ) :

10 ns

Packaging :

Tape and Reel (TR)

Factory Lead Time :

14 Weeks

Turn On Delay Time :

13 ns

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Package / Case :

PowerPAK® 1212-8

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

40A

Pin Count :

8

Number of Elements :

1

Mounting Type :

Surface Mount

Pbfree Code :

yes

Turn-Off Delay Time :

33 ns

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Rds On (Max) @ Id, Vgs :

12m Ω @ 14A, 10V

DS Breakdown Voltage-Min :

30V

Terminal Form :

C BEND

Power Dissipation-Max :

1.5W Ta

FET Type :

N-Channel

Mount :

Surface Mount

Published :

2013

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

REACH SVHC :

Unknown

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Case Connection :

DRAIN