SI7230DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.04mm

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Number of Channels :

1

Drain Current-Max (Abs) (ID) :

9A

Power Dissipation-Max :

1.5W Ta

Pin Count :

8

Rds On (Max) @ Id, Vgs :

12m Ω @ 14A, 10V

Drain to Source Breakdown Voltage :

30V

JESD-30 Code :

S-XDSO-C5

Vgs (Max) :

±20V

Radiation Hardening :

No

Turn-Off Delay Time :

33 ns

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Number of Terminations :

5

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Published :

2016

Rise Time :

10ns

Pbfree Code :

yes

Continuous Drain Current (ID) :

9A

Lead Free :

Lead Free

Element Configuration :

Single

Transistor Application :

SWITCHING

Package / Case :

PowerPAK® 1212-8

Operating Temperature :

-55°C~150°C TJ

Resistance :

12mOhm

Pulsed Drain Current-Max (IDM) :

40A

Number of Pins :

8

Turn On Delay Time :

13 ns

Mounting Type :

Surface Mount

Width :

3.3mm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Terminal Form :

C BEND

Length :

3.3mm

Factory Lead Time :

14 Weeks

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Fall Time (Typ) :

10 ns