SI4778DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Terminal Position :

Dual

Turn-Off Delay Time :

20 ns

Continuous Drain Current (ID) :

8A

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Power Dissipation-Max :

2.4W Ta 5W Tc

Drain to Source Breakdown Voltage :

25V

Mount :

Surface Mount

Fall Time (Typ) :

10 ns

Pin Count :

8

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drain-source On Resistance-Max :

0.023Ohm

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Series :

TrenchFET®

Element Configuration :

Single

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Drain Current-Max (Abs) (ID) :

8A

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Turn On Delay Time :

15 ns

Rise Time :

50ns

Terminal Finish :

PURE MATTE TIN

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 13V

Weight :

186.993455mg

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

15 Weeks

Number of Pins :

8

Number of Channels :

1

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

23m Ω @ 7A, 10V

Gate to Source Voltage (Vgs) :

16V