SI4778DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

15 ns

Transistor Application :

SWITCHING

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Continuous Drain Current (ID) :

8A

Mounting Type :

Surface Mount

Weight :

186.993455mg

Number of Pins :

8

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.5mm

Length :

5mm

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 13V

Rds On (Max) @ Id, Vgs :

23m Ω @ 7A, 10V

FET Type :

N-Channel

Power Dissipation :

2.4W

Published :

2015

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

16V

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Rise Time :

50ns

Power Dissipation-Max :

2.4W Ta 5W Tc

Terminal Position :

Dual

Vgs (Max) :

±16V

Drain Current-Max (Abs) (ID) :

8A

Terminal Form :

Gull wing

Fall Time (Typ) :

10 ns

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Width :

4mm

Factory Lead Time :

15 Weeks

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

8

Turn-Off Delay Time :

20 ns

ECCN Code :

EAR99

Number of Channels :

1

Drain to Source Breakdown Voltage :

25V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.023Ohm

Terminal Finish :

PURE MATTE TIN

JESD-609 Code :

e3

Number of Terminations :

8