SI4752DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Published :

2011

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 10A, 10V

Vgs (Max) :

±20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Fall Time (Typ) :

8 ns

Terminal Form :

Gull wing

ECCN Code :

EAR99

FET Type :

N-Channel

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

PURE MATTE TIN

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Mounting Type :

Surface Mount

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 15V

Power Dissipation :

3W

Terminal Position :

Dual

FET Feature :

Schottky Diode (Body)

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Pin Count :

8

Number of Elements :

1

Drain-source On Resistance-Max :

0.0055Ohm

Threshold Voltage :

1V

Power Dissipation-Max :

3W Ta 6.25W Tc

Rise Time :

15ns

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Series :

SkyFET®, TrenchFET®

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

25 ns

JESD-609 Code :

e3

Continuous Drain Current (ID) :

25A

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

18 ns