SI4004DY-T1-GE3
- Mfr.Part #
- SI4004DY-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 12A 8-SOIC
- Stock
- 3,792
- In Stock :
- 3,792
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Cut Tape (CT)
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 17 ns
- Fall Time (Typ) :
- 9 ns
- Published :
- 2013
- Pin Count :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- PURE MATTE TIN
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Rise Time :
- 12ns
- Min Operating Temperature :
- -55°C
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 1280pF @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 8
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 12A
- Max Operating Temperature :
- 150°C
- Turn On Delay Time :
- 15 ns
- Rds On (Max) @ Id, Vgs :
- 13.8m Ω @ 11A, 10V
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Pins :
- 8
- ECCN Code :
- EAR99
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Max Power Dissipation :
- 5W
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Series :
- TrenchFET®
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Datasheets
- SI4004DY-T1-GE3

N-Channel Cut Tape (CT) 13.8m Ω @ 11A, 10V 1280pF @ 10V 33nC @ 10V 8-SOIC (0.154, 3.90mm Width)
SI4004DY-T1-GE3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1280pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 17 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.
SI4004DY-T1-GE3 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 17 ns
SI4004DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4004DY-T1-GE3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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