SI4004DY-T1-GE3

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Mfr.Part #
SI4004DY-T1-GE3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 20V 12A 8-SOIC
Stock
3,792
In Stock :
3,792

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Cut Tape (CT)
Gate to Source Voltage (Vgs) :
20V
Turn-Off Delay Time :
17 ns
Fall Time (Typ) :
9 ns
Published :
2013
Pin Count :
8
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
SINGLE WITH BUILT-IN DIODE
Peak Reflow Temperature (Cel) :
260
Terminal Finish :
PURE MATTE TIN
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
12A Tc
RoHS Status :
ROHS3 Compliant
Mount :
Surface Mount
Rise Time :
12ns
Min Operating Temperature :
-55°C
Terminal Form :
Gull wing
Input Capacitance (Ciss) (Max) @ Vds :
1280pF @ 10V
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
8
FET Type :
N-Channel
Radiation Hardening :
No
Continuous Drain Current (ID) :
12A
Max Operating Temperature :
150°C
Turn On Delay Time :
15 ns
Rds On (Max) @ Id, Vgs :
13.8m Ω @ 11A, 10V
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
30
Number of Pins :
8
ECCN Code :
EAR99
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Max Power Dissipation :
5W
Terminal Position :
Dual
Mounting Type :
Surface Mount
Series :
TrenchFET®
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Datasheets
SI4004DY-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4004DY-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Mounting Type:Surface Mount, SI4004DY-T1-GE3 pinout, SI4004DY-T1-GE3 datasheet PDF, SI4004DY-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4004DY-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4004DY-T1-GE3


N-Channel Cut Tape (CT) 13.8m Ω @ 11A, 10V 1280pF @ 10V 33nC @ 10V 8-SOIC (0.154, 3.90mm Width)

SI4004DY-T1-GE3 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1280pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 17 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.

SI4004DY-T1-GE3 Features


a continuous drain current (ID) of 12A
the turn-off delay time is 17 ns


SI4004DY-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI4004DY-T1-GE3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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