SI3499DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

23mOhm

Power Dissipation-Max :

1.1W Ta

Width :

1.65mm

Supplier Device Package :

6-TSOP

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 4.5V

Number of Channels :

1

Gate to Source Voltage (Vgs) :

5V

Fall Time (Typ) :

65 ns

Number of Pins :

6

Weight :

19.986414mg

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±5V

Height :

1mm

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

5.3A Ta

Drain to Source Voltage (Vdss) :

8V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Max Operating Temperature :

150°C

Rise Time :

65ns

Min Operating Temperature :

-55°C

Length :

3.05mm

Series :

TrenchFET®

Mount :

Surface Mount

Turn On Delay Time :

27 ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Power Dissipation :

1.1W

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Rds On Max :

23 mΩ

Published :

2011

Number of Elements :

1

Turn-Off Delay Time :

210 ns

Rds On (Max) @ Id, Vgs :

23mOhm @ 7A, 4.5V

Drain to Source Breakdown Voltage :

-8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

750mV @ 250μA

Continuous Drain Current (ID) :

-7A