SI3495DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

-750mV

Rds On (Max) @ Id, Vgs :

24m Ω @ 7A, 4.5V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Vgs (Max) :

±5V

Number of Pins :

6

Terminal Finish :

Matte Tin (Sn)

Series :

TrenchFET®

Drain to Source Voltage (Vdss) :

20V

Gate to Source Voltage (Vgs) :

5V

Pin Count :

6

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

36 ns

Transistor Application :

SWITCHING

Pbfree Code :

yes

Element Configuration :

Single

Nominal Vgs :

-750 mV

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 4.5V

Published :

2016

Power Dissipation :

1.1W

Turn-Off Delay Time :

200 ns

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

5.3A

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

REACH SVHC :

Unknown

Current - Continuous Drain (Id) @ 25°C :

5.3A Ta

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

750mV @ 250μA

Radiation Hardening :

No

Rise Time :

36ns

Turn On Delay Time :

19 ns

JESD-609 Code :

e3

Power Dissipation-Max :

1.1W Ta

Mount :

Surface Mount

Continuous Drain Current (ID) :

-7A

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Number of Terminations :

6

Drain to Source Breakdown Voltage :

-20V

Resistance :

24mOhm