SI3493DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

40 ns

Rise Time :

40ns

Radiation Hardening :

No

Turn-Off Delay Time :

125 ns

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 4.5V

Supplier Device Package :

6-TSOP

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

1V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

5.3A Ta

Lead Free :

Lead Free

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Vgs (Max) :

±8V

Power Dissipation-Max :

1.1W Ta

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Length :

3.0988mm

Published :

2008

Drain to Source Breakdown Voltage :

-20V

Width :

1.7018mm

Continuous Drain Current (ID) :

5.3A

Turn On Delay Time :

20 ns

Gate to Source Voltage (Vgs) :

8V

Resistance :

27mOhm

Power Dissipation :

1.9W

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

27mOhm @ 7A, 4.5V

Element Configuration :

Single

Height :

990.6μm

Operating Temperature :

-55°C~150°C TJ

Drain to Source Resistance :

27mOhm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Rds On Max :

27 mΩ

FET Type :

P-Channel

Max Operating Temperature :

150°C

Mount :

Surface Mount