SI3493DDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

24m Ω @ 7.5A, 4.5V

Power Dissipation :

2W

Drain-source On Resistance-Max :

0.024Ohm

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

-7.5A

Drain to Source Breakdown Voltage :

-20V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Power Dissipation-Max :

3.6W Tc

JESD-30 Code :

R-PDSO-G6

Turn-Off Delay Time :

95 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

8A

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1825pF @ 10V

Number of Channels :

1

Max Junction Temperature (Tj) :

150°C

Vgs (Max) :

±8V

Surface Mount :

yes

Transistor Application :

SWITCHING

Turn On Delay Time :

25 ns

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

1

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

8V

Transistor Element Material :

SILICON

Height :

1.1mm

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

1V @ 250μA

Factory Lead Time :

14 Weeks

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V