SI3493BDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Lead Free :

Lead Free

Resistance :

27.5mOhm

Turn On Delay Time :

22 ns

Power Dissipation :

2.08W

Vgs(th) (Max) @ Id :

900mV @ 250μA

Length :

3.05mm

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

43.5nC @ 5V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

7A

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V

Height :

1mm

Turn-Off Delay Time :

75 ns

Terminal Finish :

Matte Tin (Sn)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Width :

1.65mm

Number of Channels :

1

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

8V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Pbfree Code :

yes

Published :

2017

Rise Time :

72ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

27.5m Ω @ 7A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

8A

Mount :

Surface Mount

ECCN Code :

EAR99

Weight :

19.986414mg

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Pin Count :

6

FET Type :

P-Channel

Power Dissipation-Max :

2.08W Ta 2.97W Tc

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Mounting Type :

Surface Mount

Vgs (Max) :

±8V

Input Capacitance (Ciss) (Max) @ Vds :

1805pF @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Pins :

6

Fall Time (Typ) :

84 ns

Number of Terminations :

6

Drain to Source Breakdown Voltage :

-20V

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

8A Tc