SI3493BDV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Pulsed Drain Current-Max (IDM) :

25A

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Rise Time :

72ns

Input Capacitance (Ciss) (Max) @ Vds :

1805pF @ 10V

FET Type :

P-Channel

Weight :

19.986414mg

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

Turn-Off Delay Time :

75 ns

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

-400mV

REACH SVHC :

Unknown

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

8A

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

6

Resistance :

27.5mOhm

Vgs (Max) :

±8V

Turn On Delay Time :

22 ns

Length :

3.05mm

Width :

1.65mm

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

43.5nC @ 5V

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-20V

Gate to Source Voltage (Vgs) :

8V

Peak Reflow Temperature (Cel) :

260

Height :

1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

-900 mV

Power Dissipation :

2.08W

Number of Pins :

6

Number of Channels :

1

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

27.5m Ω @ 7A, 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Power Dissipation-Max :

2.08W Ta 2.97W Tc

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Vgs(th) (Max) @ Id :

900mV @ 250μA

Fall Time (Typ) :

84 ns

Published :

2005

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

-8A

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Mount :

Surface Mount

JESD-609 Code :

e3