SI3483DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

71 ns

Turn On Delay Time :

10 ns

Threshold Voltage :

-1V

Current - Continuous Drain (Id) @ 25°C :

4.7A Ta

Power Dissipation :

1.14W

Lead Free :

Lead Free

Number of Pins :

6

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

4.7A

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

REACH SVHC :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

35m Ω @ 6.2A, 10V

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Finish :

Matte Tin (Sn)

Nominal Vgs :

-1 V

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

6

Published :

2015

Mount :

Surface Mount

Resistance :

35mOhm

Terminal Form :

Gull wing

Series :

TrenchFET®

Number of Elements :

1

JESD-609 Code :

e3

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Rise Time :

10ns

Fall Time (Typ) :

10 ns

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

-6.2A

Power Dissipation-Max :

1.14W Ta

FET Type :

P-Channel

Transistor Element Material :

SILICON

Pin Count :

6

Element Configuration :

Single