SI3481DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

4A

Pin Count :

6

Power Dissipation :

1.14W

Continuous Drain Current (ID) :

4A

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.048Ohm

Power Dissipation-Max :

1.14W Ta

Terminal Position :

Dual

Turn On Delay Time :

11 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

60 ns

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

14ns

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

48m Ω @ 5.3A, 10V

Number of Terminations :

6

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

Unknown

FET Type :

P-Channel

Vgs (Max) :

±20V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Mounting Type :

Surface Mount

Pbfree Code :

yes

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Terminal Form :

Gull wing

Fall Time (Typ) :

14 ns

Element Configuration :

Single

Package / Case :

SOT-23-6 Thin, TSOT-23-6

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Nominal Vgs :

-1 V

ECCN Code :

EAR99