SI3477DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Power Dissipation :

2W

Operating Temperature :

-55°C~150°C TJ

Published :

2017

Drain to Source Resistance :

17.5mOhm

Rds On (Max) @ Id, Vgs :

17.5mOhm @ 9A, 4.5V

Radiation Hardening :

No

Turn On Delay Time :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

12V

Fall Time (Typ) :

30 ns

Continuous Drain Current (ID) :

8A

REACH SVHC :

Unknown

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

10V

Input Capacitance :

2.6nF

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Resistance :

17.5mOhm

Number of Pins :

6

Mount :

Surface Mount

Vgs (Max) :

±10V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Nominal Vgs :

-400 mV

Weight :

19.986414mg

Number of Channels :

1

Vgs(th) (Max) @ Id :

1V @ 250μA

Mounting Type :

Surface Mount

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Rise Time :

10ns

Lead Free :

Lead Free

Turn-Off Delay Time :

65 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2W Ta 4.2W Tc

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain to Source Breakdown Voltage :

-12V

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Rds On Max :

17.5 mΩ

Supplier Device Package :

6-TSOP

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 6V