SI3475DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Drain Current-Max (Abs) (ID) :

0.95A

Peak Reflow Temperature (Cel) :

260

Packaging :

Cut Tape (CT)

Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

3.2W

Mount :

Surface Mount

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Series :

TrenchFET®

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

1.61 Ω @ 900mA, 10V

Number of Pins :

6

Terminal Finish :

PURE MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

950mA Tc

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Published :

2015

Pbfree Code :

yes

Pin Count :

6

Element Configuration :

Single

Number of Terminations :

6

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Lead Free :

Lead Free

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

200V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 50V

Resistance :

1.61Ohm

Turn-Off Delay Time :

23 ns

Continuous Drain Current (ID) :

750mA

Terminal Form :

Gull wing

Rise Time :

29ns

Fall Time (Typ) :

14 ns

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

20V