SI3475DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Power Dissipation :

2W

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Published :

2016

Element Configuration :

Single

Number of Channels :

1

Rise Time :

29ns

Number of Elements :

2

Input Capacitance :

500pF

Rds On (Max) @ Id, Vgs :

1.61Ohm @ 900mA, 10V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

-200V

Current - Continuous Drain (Id) @ 25°C :

950mA Tc

Drain to Source Voltage (Vdss) :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

-950mA

FET Type :

P-Channel

Rds On Max :

1.61 Ω

Series :

TrenchFET®

Height :

1mm

Fall Time (Typ) :

14 ns

Length :

3.05mm

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Supplier Device Package :

6-TSOP

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 50V

Drain to Source Resistance :

1.61Ohm

Packaging :

Tape and Reel (TR)

Weight :

19.986414mg

Turn-Off Delay Time :

23 ns

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

150°C

Number of Pins :

6

Lead Free :

Lead Free

Power Dissipation-Max :

2W Ta 3.2W Tc

Operating Temperature :

-55°C~150°C TJ

Width :

1.65mm

Min Operating Temperature :

-55°C

Turn On Delay Time :

14 ns