SI3473DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

50ns

Mounting Type :

Surface Mount

Radiation Hardening :

No

ECCN Code :

EAR99

Weight :

19.986414mg

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

6

Turn-Off Delay Time :

130 ns

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Continuous Drain Current (ID) :

-5.9A

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Fall Time (Typ) :

110 ns

Published :

2013

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

23m Ω @ 7.9A, 4.5V

Power Dissipation-Max :

1.1W Ta

Terminal Form :

Gull wing

Vgs (Max) :

±8V

Series :

TrenchFET®

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Elements :

1

Gate to Source Voltage (Vgs) :

8V

Number of Channels :

1

Vgs(th) (Max) @ Id :

1V @ 250μA

Additional Feature :

ULTRA LOW RESISTANCE

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Number of Terminations :

6

Drain-source On Resistance-Max :

0.023Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

25 ns

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

12V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

5.9A Ta