SI3473DV-T1-E3
- Mfr.Part #
- SI3473DV-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 5.9A 6TSOP
- Stock
- 7,947
- In Stock :
- 7,947
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- -5.9A
- Number of Terminations :
- 6
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn On Delay Time :
- 25 ns
- Length :
- 3.05mm
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 50ns
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 12V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Dual Supply Voltage :
- -12V
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 4.5V
- Series :
- TrenchFET®
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 5.9A Ta
- Height :
- 1mm
- JESD-609 Code :
- e3
- Pin Count :
- 6
- Mounting Type :
- Surface Mount
- Termination :
- SMD/SMT
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Number of Pins :
- 6
- Power Dissipation :
- 2W
- Power Dissipation-Max :
- 1.1W Ta
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 130 ns
- Terminal Finish :
- Matte Tin (Sn)
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Nominal Vgs :
- -1 V
- Resistance :
- 23mOhm
- Vgs (Max) :
- ±8V
- Gate to Source Voltage (Vgs) :
- 8V
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 7.9A, 4.5V
- Transistor Application :
- SWITCHING
- Published :
- 2011
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 50 ns
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 1.65mm
- Weight :
- 19.986414mg
- FET Type :
- P-Channel
- Threshold Voltage :
- -1V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Datasheets
- SI3473DV-T1-E3
P-Channel Tape & Reel (TR) 23m Ω @ 7.9A, 4.5V ±8V 33nC @ 4.5V 12V SOT-23-6 Thin, TSOT-23-6
SI3473DV-T1-E3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -5.9A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 130 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 12V in order to operate.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.
SI3473DV-T1-E3 Features
a continuous drain current (ID) of -5.9A
the turn-off delay time is 130 ns
a threshold voltage of -1V
a 12V drain to source voltage (Vdss)
SI3473DV-T1-E3 Applications
There are a lot of Vishay Siliconix
SI3473DV-T1-E3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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