SI3473CDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate to Source Voltage (Vgs) :

8V

Power Dissipation-Max :

2W Ta 4.2W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2010pF @ 6V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Rds On (Max) @ Id, Vgs :

22m Ω @ 8.1A, 4.5V

Length :

3.05mm

Drain Current-Max (Abs) (ID) :

8A

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

-12V

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

10 ns

Weight :

19.986414mg

Series :

TrenchFET®

Mounting Type :

Surface Mount

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

6

ECCN Code :

EAR99

Turn-Off Delay Time :

62 ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Element Configuration :

Single

Pin Count :

6

Continuous Drain Current (ID) :

8A

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

12V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Mount :

Surface Mount

Terminal Form :

Gull wing

Published :

2015

Power Dissipation :

2W

Number of Terminations :

6

Rise Time :

15ns

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

14 Weeks

Terminal Position :

Dual

Pbfree Code :

yes

Height :

1mm

Vgs (Max) :

±8V

Drain-source On Resistance-Max :

0.022Ohm

Fall Time (Typ) :

35 ns

Width :

1.65mm

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 8V

FET Type :

P-Channel