SI3473CDV-T1-E3
- Mfr.Part #
- SI3473CDV-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 8A 6TSOP
- Stock
- 23,368
- In Stock :
- 23,368
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 6
- Number of Channels :
- 1
- Series :
- TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 8V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Width :
- 1.65mm
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 8.1A, 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 8V
- Turn-Off Delay Time :
- 62 ns
- Number of Terminations :
- 6
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drain Current-Max (Abs) (ID) :
- 8A
- Drain to Source Voltage (Vdss) :
- 12V
- Resistance :
- 22mOhm
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 15ns
- Terminal Form :
- Gull wing
- Fall Time (Typ) :
- 35 ns
- Continuous Drain Current (ID) :
- 8A
- Length :
- 3.05mm
- Published :
- 2016
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- FET Type :
- P-Channel
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Factory Lead Time :
- 14 Weeks
- Vgs (Max) :
- ±8V
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 19.986414mg
- Height :
- 1mm
- Drain to Source Breakdown Voltage :
- -12V
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 2W
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 2010pF @ 6V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Terminal Finish :
- MATTE TIN
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 4.2W Tc
- Pin Count :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 10 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Terminal Position :
- Dual
- Datasheets
- SI3473CDV-T1-E3
P-Channel Tape & Reel (TR) 22m Ω @ 8.1A, 4.5V ±8V 2010pF @ 6V 65nC @ 8V 12V SOT-23-6 Thin, TSOT-23-6
SI3473CDV-T1-E3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2010pF @ 6V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8A amps.In this device, the drain-source breakdown voltage is -12V and VGS=-12V, so the drain-source breakdown voltage is -12V in this case.A device can conduct a maximum continuous current of [8A] according to its drain current.It is [62 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.To operate this transistor, you will need a 12V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
SI3473CDV-T1-E3 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 62 ns
a 12V drain to source voltage (Vdss)
SI3473CDV-T1-E3 Applications
There are a lot of Vishay Siliconix
SI3473CDV-T1-E3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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