SI3469DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

-1V

Drain-source On Resistance-Max :

0.03Ohm

Drain Current-Max (Abs) (ID) :

5A

Terminal Position :

Dual

Continuous Drain Current (ID) :

-6.7A

FET Type :

P-Channel

Transistor Element Material :

SILICON

Weight :

19.986414mg

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

Number of Pins :

6

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Power Dissipation-Max :

1.14W Ta

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Turn On Delay Time :

10 ns

Turn-Off Delay Time :

50 ns

Rds On (Max) @ Id, Vgs :

30m Ω @ 6.7A, 10V

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Fall Time (Typ) :

35 ns

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Elements :

1

Rise Time :

12ns

Published :

2016

REACH SVHC :

Unknown

Pin Count :

6

Nominal Vgs :

-1 V

Power Dissipation :

1.14W

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

-20V

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Factory Lead Time :

14 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V