SI3469DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

50 ns

Element Configuration :

Single

Fall Time (Typ) :

12 ns

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Length :

3.05mm

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

12ns

Terminal Position :

Dual

ECCN Code :

EAR99

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

Unknown

Power Dissipation :

1.14W

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Height :

1mm

Series :

TrenchFET®

Nominal Vgs :

-3 V

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

-3V

Mount :

Surface Mount

Number of Pins :

6

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

5A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Pbfree Code :

yes

Continuous Drain Current (ID) :

-6.7A

Published :

2009

Factory Lead Time :

14 Weeks

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

30m Ω @ 6.7A, 10V

Number of Channels :

1

FET Type :

P-Channel

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Weight :

19.986414mg

Pin Count :

6

Turn On Delay Time :

10 ns

Width :

1.65mm

Resistance :

30mOhm

Power Dissipation-Max :

1.14W Ta

Current - Continuous Drain (Id) @ 25°C :

5A Ta