SI3467DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

20V

Factory Lead Time :

15 Weeks

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Number of Elements :

1

Transistor Application :

SWITCHING

Package / Case :

SOT-23-6 Thin, TSOT-23-6

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

54m Ω @ 5A, 10V

Power Dissipation :

1.14W

JESD-30 Code :

R-PDSO-G6

Terminal Form :

Gull wing

Number of Terminations :

6

Drain-source On Resistance-Max :

0.054Ohm

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

Unknown

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

20V

Published :

2016

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

3.8A

Terminal Finish :

PURE MATTE TIN

Power Dissipation-Max :

1.14W Ta

Mount :

Surface Mount

Terminal Position :

Dual

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta