SI3467DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

21 Weeks

Height :

1mm

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Width :

1.65mm

Rds On (Max) @ Id, Vgs :

54m Ω @ 5A, 10V

Pin Count :

6

FET Type :

P-Channel

Rise Time :

15ns

Published :

2015

Element Configuration :

Single

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta

Vgs (Max) :

±20V

Power Dissipation-Max :

1.14W Ta

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Terminal Position :

Dual

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

22 ns

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

3.8A

Terminal Form :

Gull wing

Weight :

19.986414mg

Continuous Drain Current (ID) :

-5A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

TrenchFET®

Drain-source On Resistance-Max :

0.054Ohm

Number of Pins :

6

Length :

3.05mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Pbfree Code :

yes

Transistor Element Material :

SILICON

Fall Time (Typ) :

15 ns

Turn On Delay Time :

10 ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260