SI3465DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Transistor Application :

SWITCHING

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 5V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

3A

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

80m Ω @ 4A, 10V

Number of Terminations :

6

Drain Current-Max (Abs) (ID) :

3A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

1.14W Ta

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.14W

Published :

2016

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

20V

FET Type :

P-Channel

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Element Configuration :

Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

6

Drain-source On Resistance-Max :

0.08Ohm

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

15 Weeks