SI3465DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Number of Terminations :

6

Continuous Drain Current (ID) :

-4A

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PDSO-G6

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.08Ohm

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

21 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Qualification Status :

Not Qualified

Turn-Off Delay Time :

19 ns

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Published :

2017

Fall Time (Typ) :

13 ns

JESD-609 Code :

e3

FET Type :

P-Channel

Element Configuration :

Single

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Pin Count :

6

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max :

1.14W Ta

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

3A

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

13ns

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

80m Ω @ 4A, 10V

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 5V

Gate to Source Voltage (Vgs) :

20V