SI3464DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

8V

Width :

1.65mm

Number of Pins :

6

Drain-source On Resistance-Max :

0.024Ohm

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Power Dissipation :

2W

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Mount :

Surface Mount

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Height :

1.1mm

Rise Time :

12ns

Vgs (Max) :

±8V

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

22 ns

Radiation Hardening :

No

Published :

2014

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Mounting Type :

Surface Mount

REACH SVHC :

Unknown

Pin Count :

6

Drain Current-Max (Abs) (ID) :

8A

Pbfree Code :

yes

Power Dissipation-Max :

2W Ta 3.6W Tc

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Position :

Dual

Continuous Drain Current (ID) :

8A

Transistor Element Material :

SILICON

Length :

3.05mm

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Turn On Delay Time :

3 ns

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

24m Ω @ 7.5A, 4.5V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1065pF @ 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Terminal Form :

Gull wing

Weight :

19.986414mg

Fall Time (Typ) :

8 ns

Nominal Vgs :

450 mV

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

20V