SI3460DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

6.8A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

REACH SVHC :

Unknown

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

20V

Number of Channels :

1

Number of Pins :

6

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

450mV @ 1mA (Min)

Weight :

19.986414mg

FET Type :

N-Channel

Fall Time (Typ) :

30 ns

Published :

2013

Element Configuration :

Single

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Mount :

Surface Mount

Turn-Off Delay Time :

70 ns

Gate to Source Voltage (Vgs) :

8V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Rds On (Max) @ Id, Vgs :

27m Ω @ 5.1A, 4.5V

Radiation Hardening :

No

Power Dissipation-Max :

1.1W Ta

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

15 ns

Number of Elements :

1

Rise Time :

30ns

Threshold Voltage :

450mV

Number of Terminations :

6

Factory Lead Time :

13 Weeks

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.027Ohm

Terminal Position :

Dual

Nominal Vgs :

450 mV

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta