SI3460DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

27m Ω @ 5.1A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Rise Time :

30ns

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

8V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Vgs (Max) :

±8V

Number of Pins :

6

JESD-609 Code :

e3

Width :

1.65mm

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

Published :

2009

Turn On Delay Time :

15 ns

Vgs(th) (Max) @ Id :

450mV @ 1mA (Min)

Resistance :

27mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Series :

TrenchFET®

Terminal Position :

Dual

Number of Terminations :

6

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Height :

990.6μm

Lead Free :

Lead Free

Pbfree Code :

yes

Power Dissipation-Max :

1.1W Ta

FET Type :

N-Channel

Length :

3.05mm

Turn-Off Delay Time :

70 ns

Weight :

19.986414mg

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain to Source Breakdown Voltage :

20V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Power Dissipation :

1.1W

Pin Count :

6

Fall Time (Typ) :

30 ns

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

6.8A

Number of Channels :

1

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount