SI3460DDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

21 ns

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

8V

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Finish :

MATTE TIN

Series :

TrenchFET®

Element Configuration :

Single

Fall Time (Typ) :

8 ns

DS Breakdown Voltage-Min :

20V

Factory Lead Time :

14 Weeks

Weight :

19.986414mg

Threshold Voltage :

400mV

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

7.9A Tc

Rise Time :

11ns

Number of Elements :

1

Vgs (Max) :

±8V

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.7W

Rds On (Max) @ Id, Vgs :

28m Ω @ 5.1A, 4.5V

Number of Pins :

6

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

REACH SVHC :

Unknown

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

666pF @ 10V

Turn On Delay Time :

6 ns

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 8V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Mount :

Surface Mount

Number of Terminations :

6

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

7.9A

Number of Channels :

1

Resistance :

28mOhm

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.7W Ta 2.7W Tc