SI3460BDV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Pbfree Code :

yes

Length :

3.05mm

Fall Time (Typ) :

5 ns

Resistance :

27mOhm

Number of Terminations :

6

Max Output Current :

2A

Pin Count :

6

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Lead Free :

Lead Free

Vgs (Max) :

±8V

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

1 V

Weight :

19.986414mg

Factory Lead Time :

14 Weeks

Series :

TrenchFET®

Transistor Application :

SWITCHING

Turn On Delay Time :

5 ns

Gate to Source Voltage (Vgs) :

8V

Power Dissipation-Max :

2W Ta 3.5W Tc

Height :

1mm

Published :

2001

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Terminal Position :

Dual

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

27m Ω @ 5.1A, 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Drain Current-Max (Abs) (ID) :

8A

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

ECCN Code :

EAR99

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 10V

Element Configuration :

Single

REACH SVHC :

Unknown

Continuous Drain Current (ID) :

8A

Dual Supply Voltage :

20V

Width :

1.65mm

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Rise Time :

15ns

Turn-Off Delay Time :

25 ns

Pulsed Drain Current-Max (IDM) :

20A

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Number of Pins :

6

Threshold Voltage :

1V

Termination :

SMD/SMT

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 8V

JESD-609 Code :

e3