SI3459DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

1.65mm

Drain to Source Resistance :

220mOhm

Rds On (Max) @ Id, Vgs :

220mOhm @ 2.2A, 10V

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc

Mount :

Surface Mount

Weight :

19.986414mg

Mounting Type :

Surface Mount

Number of Pins :

6

Height :

1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

23 ns

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Vgs (Max) :

±20V

Rise Time :

12ns

Continuous Drain Current (ID) :

2.2A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Min Operating Temperature :

-55°C

Rds On Max :

220 mΩ

Power Dissipation-Max :

2W Ta

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Supplier Device Package :

6-TSOP

Power Dissipation :

2W

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

8 ns

Drain to Source Voltage (Vdss) :

60V

Number of Channels :

1

Fall Time (Typ) :

12 ns

Resistance :

220mOhm

Published :

2016

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

-60V

Length :

3.05mm

Number of Elements :

1

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®