SI3459BDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

-3 V

Power Dissipation-Max :

2W Ta 3.3W Tc

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 30V

Terminal Form :

Gull wing

Number of Terminations :

6

REACH SVHC :

Unknown

Feedback Cap-Max (Crss) :

30 pF

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Mount :

Surface Mount

Turn On Delay Time :

5 ns

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

Factory Lead Time :

14 Weeks

Pbfree Code :

yes

Transistor Element Material :

SILICON

Power Dissipation :

2W

Number of Channels :

1

Drain to Source Voltage (Vdss) :

60V

Resistance :

216mOhm

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Radiation Hardening :

No

Weight :

19.986414mg

Current - Continuous Drain (Id) @ 25°C :

2.9A Tc

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

6

Height :

1mm

Width :

1.65mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

18 ns

Continuous Drain Current (ID) :

-2.2A

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Length :

3.05mm

Rds On (Max) @ Id, Vgs :

216m Ω @ 2.2A, 10V

Terminal Finish :

PURE MATTE TIN

Rise Time :

12ns

Element Configuration :

Single

Pin Count :

6

Threshold Voltage :

-3V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

10 ns

Drain Current-Max (Abs) (ID) :

0.0022A

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant