SI3459BDV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

Unknown

Lead Free :

Lead Free

Turn-Off Delay Time :

18 ns

Weight :

19.986414mg

Fall Time (Typ) :

10 ns

Series :

TrenchFET®

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

216m Ω @ 2.2A, 10V

Turn On Delay Time :

5 ns

Threshold Voltage :

-3V

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2W

Continuous Drain Current (ID) :

-2.9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Vgs (Max) :

±20V

Resistance :

216mOhm

Mount :

Surface Mount

Number of Pins :

6

Rise Time :

12ns

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

6

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e4

Current - Continuous Drain (Id) @ 25°C :

2.9A Tc

Width :

1.65mm

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 30V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Terminal Finish :

Silver (Ag)

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Published :

2015

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Power Dissipation-Max :

3.3W Tc

Feedback Cap-Max (Crss) :

30 pF

Nominal Vgs :

-3 V

Pin Count :

6

Drain to Source Voltage (Vdss) :

60V

Drain Current-Max (Abs) (ID) :

0.0022A

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Terminal Position :

Dual

Height :

1mm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Length :

3.05mm

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Element Configuration :

Single