SI3458DV-T1-E3
- Mfr.Part #
- SI3458DV-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 3.2A 6TSOP
- Stock
- 1,519
- In Stock :
- 1,519
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 6
- Turn On Delay Time :
- 10 ns
- Drain to Source Voltage (Vdss) :
- 60V
- Gate to Source Voltage (Vgs) :
- 20V
- Min Operating Temperature :
- -55°C
- Supplier Device Package :
- 6-TSOP
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 3.2A, 10V
- Power Dissipation-Max :
- 2W Ta
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 10 ns
- Power Dissipation :
- 2W
- Drain to Source Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Element Configuration :
- Single
- Rds On Max :
- 100 mΩ
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 3.2A
- Series :
- TrenchFET®
- Drain to Source Resistance :
- 100MOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 1V @ 250μA (Min)
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 20 ns
- Number of Elements :
- 1
- Max Operating Temperature :
- 150°C
- Radiation Hardening :
- No
- Weight :
- 19.986414mg
- Published :
- 2016
- Length :
- 3.05mm
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Height :
- 1mm
- Rise Time :
- 10ns
- Width :
- 1.65mm
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SI3458DV-T1-E3
N-Channel Tape & Reel (TR) 100mOhm @ 3.2A, 10V ±20V 16nC @ 10V 60V SOT-23-6 Thin, TSOT-23-6
SI3458DV-T1-E3 Overview
This device's continuous drain current (ID) is 3.2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 100mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
SI3458DV-T1-E3 Features
a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 100mOhm
a 60V drain to source voltage (Vdss)
SI3458DV-T1-E3 Applications
There are a lot of Vishay Siliconix
SI3458DV-T1-E3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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