SI3458BDV-T1-GE3
- Mfr.Part #
- SI3458BDV-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 4.1A 6TSOP
- Stock
- 7,361
- In Stock :
- 7,361
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 6
- Rise Time :
- 12ns
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 3.2A
- Weight :
- 19.986414mg
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Terminal Finish :
- Pure Matte Tin (Sn)
- Turn-Off Delay Time :
- 18 ns
- Drain to Source Breakdown Voltage :
- 60V
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 10 ns
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Number of Pins :
- 6
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Factory Lead Time :
- 14 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 1.65mm
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- Unknown
- Nominal Vgs :
- 3 V
- Power Dissipation-Max :
- 2W Ta 3.3W Tc
- Threshold Voltage :
- 3V
- Length :
- 3.05mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Published :
- 2011
- Resistance :
- 100MOhm
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 30V
- Number of Channels :
- 1
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Mounting Type :
- Surface Mount
- Series :
- TrenchFET®
- Number of Terminations :
- 6
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Height :
- 1mm
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 3.2A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 5 ns
- Power Dissipation :
- 2W
- Datasheets
- SI3458BDV-T1-GE3
N-Channel Tape & Reel (TR) 100m Ω @ 3.2A, 10V ±20V 350pF @ 30V 11nC @ 10V SOT-23-6 Thin, TSOT-23-6
SI3458BDV-T1-GE3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 350pF @ 30V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
SI3458BDV-T1-GE3 Features
a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 18 ns
a threshold voltage of 3V
SI3458BDV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3458BDV-T1-GE3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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