SI3458BDV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

100m Ω @ 3.2A, 10V

Transistor Element Material :

SILICON

Element Configuration :

Single

Continuous Drain Current (ID) :

4.1A

Series :

TrenchFET®

Width :

1.65mm

Number of Pins :

6

Turn On Delay Time :

5 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

Weight :

19.986414mg

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-23-6 Thin, TSOT-23-6

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

3 V

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 30V

Turn-Off Delay Time :

18 ns

Height :

1mm

Terminal Finish :

Pure Matte Tin (Sn)

Threshold Voltage :

3V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Number of Channels :

1

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Number of Elements :

1

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

10 ns

Mount :

Surface Mount

Pin Count :

6

Pbfree Code :

yes

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

4.1A Tc

Power Dissipation :

2W

Factory Lead Time :

14 Weeks

Drain Current-Max (Abs) (ID) :

3.2A

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Rise Time :

12ns

FET Type :

N-Channel

Length :

3.05mm

Power Dissipation-Max :

2W Ta 3.3W Tc

Operating Mode :

ENHANCEMENT MODE

Published :

2012