SI3457DV

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Mfr.Part #
SI3457DV
Manufacturer
onsemi
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET P-CH 30V 4A SUPERSOT6
Stock
88,971
In Stock :
88,971

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
P-Channel
Vgs(th) (Max) @ Id :
3V @ 250µA
Weight :
36mg
Series :
PowerTrench®
Rds On (Max) @ Id, Vgs :
50m Ω @ 4A, 10V
Terminal Form :
Gull wing
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
470pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
4A Ta
Rise Time :
12ns
Drain to Source Voltage (Vdss) :
30V
Gate to Source Voltage (Vgs) :
25V
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
8.1nC @ 5V
Lead Free :
Lead Free
Terminal Finish :
Tin (Sn)
Voltage - Rated DC :
-30V
Packaging :
Tape and Reel (TR)
Terminal Position :
Dual
Power Dissipation :
1.6W
Element Configuration :
Single
Current Rating :
-4A
Number of Pins :
6
Mount :
Surface Mount
Number of Terminations :
6
Turn-Off Delay Time :
16 ns
Factory Lead Time :
10 Weeks
Pbfree Code :
yes
Continuous Drain Current (ID) :
4A
RoHS Status :
ROHS3 Compliant
Drain Current-Max (Abs) (ID) :
4A
Resistance :
50mOhm
Power Dissipation-Max :
1.6W Ta
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
7 ns
JESD-609 Code :
e3
Drain to Source Breakdown Voltage :
-30V
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Vgs (Max) :
±25V
Radiation Hardening :
No
Fall Time (Typ) :
12 ns
Transistor Element Material :
SILICON
Datasheets
SI3457DV
Introducing Transistors - FETs, MOSFETs - Single onsemi SI3457DV from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:6, Number of Terminations:6, Package / Case:SOT-23-6 Thin, TSOT-23-6, SI3457DV pinout, SI3457DV datasheet PDF, SI3457DV amp .Beyond Transistors - FETs, MOSFETs - Single onsemi SI3457DV ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SI3457DV


P-Channel Tape & Reel (TR) 50m Ω @ 4A, 10V ±25V 470pF @ 25V 8.1nC @ 5V 30V SOT-23-6 Thin, TSOT-23-6

Description


The SI3457DV is a single P-Channel logic level PowerTrench? MOSFET. The sophisticated PowerTrench technique used by Fairchild to make this P-Channel Logic Level MOSFET. For battery power management applications, it has been optimized.



Features


  • –4 A, –30 V. RDS(ON) = 50 m? @ VGS = –10 V

                        RDS(ON) = 75 m? @ VGS = –4.5 V

  • Low gate charge

  • High performance trench technology for extremely low RDS(ON)

  • Low on-resistance

  • High current, high speed



Applications


  • Battery management

  • Load switch

  • Battery protection

  • Automotive electronics

  • Power converters


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