SI3457DV
- Mfr.Part #
- SI3457DV
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 4A SUPERSOT6
- Stock
- 88,971
- In Stock :
- 88,971
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Weight :
- 36mg
- Series :
- PowerTrench®
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 4A, 10V
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 470pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Rise Time :
- 12ns
- Drain to Source Voltage (Vdss) :
- 30V
- Gate to Source Voltage (Vgs) :
- 25V
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 8.1nC @ 5V
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- -30V
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Power Dissipation :
- 1.6W
- Element Configuration :
- Single
- Current Rating :
- -4A
- Number of Pins :
- 6
- Mount :
- Surface Mount
- Number of Terminations :
- 6
- Turn-Off Delay Time :
- 16 ns
- Factory Lead Time :
- 10 Weeks
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 4A
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 4A
- Resistance :
- 50mOhm
- Power Dissipation-Max :
- 1.6W Ta
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 7 ns
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- -30V
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Vgs (Max) :
- ±25V
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 12 ns
- Transistor Element Material :
- SILICON
- Datasheets
- SI3457DV

P-Channel Tape & Reel (TR) 50m Ω @ 4A, 10V ±25V 470pF @ 25V 8.1nC @ 5V 30V SOT-23-6 Thin, TSOT-23-6
Description
The SI3457DV is a single P-Channel logic level PowerTrench? MOSFET. The sophisticated PowerTrench technique used by Fairchild to make this P-Channel Logic Level MOSFET. For battery power management applications, it has been optimized.
Features
-
–4 A, –30 V. RDS(ON) = 50 m? @ VGS = –10 V
RDS(ON) = 75 m? @ VGS = –4.5 V
-
Low gate charge
-
High performance trench technology for extremely low RDS(ON)
-
Low on-resistance
-
High current, high speed
Applications
-
Battery management
-
Load switch
-
Battery protection
-
Automotive electronics
-
Power converters
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